In recent years, with the rise of AI, a storage chip with high bandwidth and low power consumption characteristics - HBM chip - has also become popular, including NVIDIA H100, AMD MI300, etc. Now, Samsung plans to further expand the use of HBM chips and bring them to the mobile phone market.

According to the Seoul Economic Daily, Song Jae hyuk, Chief Technology Officer of Samsung Electronics' Semiconductor and Device Solutions (DS) division, stated that the first mobile product equipped with LPW DRAM memory will be launched in 2028. LPW DRAM, by stacking LPDDR DRAM and significantly increasing I/O interfaces, can reduce power consumption and improve performance. It adopts a new packaging technology of vertical wire bonding and is known as the "mobile HBM". Its bandwidth can reach over 200GB/s, which is 166% higher than the existing LPDDR5x.

It is understood that HBM stands for High Bandwidth Memory, which means high bandwidth memory. This is a high-performance dynamic random access memory (DRAM) based on 3D stacking technology, designed specifically for applications that require extremely high data bandwidth. It achieves high-speed interconnection with processors (such as GPUs, CPUs, AI accelerators) by vertically stacking multiple layers of DRAM chips and utilizing through silicon vias (TSVs) and intermediaries, significantly improving memory bandwidth and energy efficiency.

For example, the bandwidth of a single HBM chip can reach several hundred GB/s to several TB/s (such as the HBM3 single stack bandwidth of 819GB/s); Meanwhile, compared to GDDR6, HBM reduces power consumption by about 50% under the same bandwidth thanks to short-range interconnection and advanced processes.